v rrm = 45 v - 100 v i f(av) = 200 a features ? high surge capability twin tower package ? not esd sensitive parameter symbol mbr20045ct(r) mbr20060ct(r) unit repetitive peak reverse voltage v rrm 45 60 v rms reverse voltage v rms 32 42 v ? types from 45 v to 100 v v rrm conditions 100 70 mbr20045ct thru MBR200100CTR mbr200100ct(r) 80 57 mbr20080ct(r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) silicon power schottk y diode dc blocking voltage v dc 45 60 v operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol mbr20045ct(r) mbr20060ct(r) unit a verage forward current (per pkg) i f(av) 200 200 a maximum forward voltage (per leg) 0.70 0.75 11 10 10 30 30 thermal characteristics thermal resistance, junction-case, per leg r jc 0.45 0.45 c/w t j = 100 c 10 10 t c = 125 c 200 200 peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine 1500 1500 1500 1500 v -55 to 150 -55 to 150 100 80 a -55 to 150 mbr200100ct(r) 11 mbr20080ct(r) 0.45 t j = 150 c 0.45 0.84 0.84 30 ma t j = 25 c i fm = 100 a, t j = 25 c conditions -55 to 150 electrical characteristics, at tj = 25 c, unless otherwise specified reverse current at rated dc blocking voltage (per leg) i r v f 30 www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
mbr20045ct thru MBR200100CTR www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mbr20045ct thru MBR200100CTR www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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